transient voltage suppressors for esd protection revision july 18, 2016 1 / 3 @ un semiconductor co., ltd. 2016 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. ULC3324P10 un semiconductor co., ltd. www.unsemi.com.tw symbol parameter value units p pp peak pulse power (tp=8/20s waveform) 45 watts t j operating junction temperature range -40 to +125 oc t stg storage temperature range -55 to +150 oc t l lead soldering temperature 260 (10 sec.) oc description feature functional diagram applications mechanical data mechanical characteristics ? 45 watts peak pulse power per line (tp=8/20s) ? protects four i/o lines ? low clamping voltage ? working voltages : 3.3v ? low leakage current ? iec61000-4-4 (eft) 40a (5/50 s) ? iec61000-4-5 (lighting) 3a (8/20 s) ? iec61000-4-2(esd): 17kv (air discharge) 15kv (contact discharge); ? usb 3.0 / usb 3.1 interfaces ? hdmi 1.4 / hdmi 2.0 interfaces ? video graphics cards ? notebooks, desktops, and servers ? portable instrumentation ? industrial controls ? peripherals ? dfn2510p10 package ? molding compound flammability rating : ul 94v-o ? weight 15 millgrams (approximate) ? quantity per reel : 3,000pcs ? reel size : 7 inch ? lead finish : lead free the ULC3324P10 is ultra low capacitance tvs arrays designed to protect high speed data interfaces. this series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from over-voltage caused by esd (electrostatic discharge), cde (cable discharge events), and eft (electrical fast transients).
transient voltage suppressors for esd protection revision july 18, 2016 2 / 3 @ un semiconductor co., ltd. 2016 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. ULC3324P10 un semiconductor co., ltd. www.unsemi.com.tw characteristics symbol test conditions min. typ. max. unit reverse working voltage v rwm -- -- -- 3.3 v reverse breakdown voltage v br i t =1ma 4.0 -- -- v reverse leakage current i r v rwm =5v t=25 c -- -- 1 ua positive clamping voltage v c i pp =1a t p =8/20 s -- -- 6.2 v i pp =3a t p =8/20 s -- -- 15 junction capacitance c j vr = 0v, f = 1mhz -- 0.5 -- pf electrical characteristics (@ 25 unless otherwise specified ) characteristic curves fig1. 8/20s pulse waveform fig2. power derating curve fig3. clamping voltage vs. peak pulse current (tp=8/20us) fig4. insection loss (s21)
transient voltage suppressors for esd protection revision july 18, 2016 3 / 3 @ un semiconductor co., ltd. 2016 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. ULC3324P10 un semiconductor co., ltd. www.unsemi.com.tw dfn2510p10 package outline & dimensions * soldering footprint
|
